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PHOTODIODE
Si photodiode
S9219 series
Spectral response like human eye
Features Applications
l Accurate visible-compensated filter is used l Photometry l High reliable metal package l Luxmeter, etc. l S9219: Metal package with BNC connector (active area: f11.3 mm) l S9219-01: TO-5 (active area: 3.6 x 3.6 mm) l Deviation from standard spectral luminous efficiency V(l) *1:
fs =10 % Typ.
s Absolute maximum ratings
Parameter Reverse voltage Operating temperature Storage temperature Symbol VR Max. Topr Tstg S9219 5 -20 to +50 -55 to +50 S9219-01 5 -40 to +50 -55 to +50 Unit V C C
s Electrical and optical characteristics (Ta=25 C)
S9219 S9219-01 Unit Typ. Max. Typ. Max. 2 Spectral response range * 380 to 780 380 to 780 nm Peak sensitivity wavelength 550 550 nm p Photo sensitivity S 0.24 0.22 A/W =p Short circuit current Isc 100 lx, 2856 K 3.8 0.5 A Dark current ID VR=10 mV 50 500 10 50 pA Rise time tr VR=0 V, RL=1 k 2.5 0.5 s Terminal capacitance Ct VR=0 V, f=10 kHz 1100 150 pF *1: Standard spectral luminous efficiency V (): wavelength response of the human eye. The extent of deviation from V () is indicated as fs (%). *2: Conforms to specified range for V () Parameter Symbol Condition
1
Si photodiode
s Spectral response
0.3 (Typ. Ta=25 C) fs=10 % Typ.
S9219 series
(Typ. Ta=25 C)
s Dark current vs. reverse voltage
(Typ. Ta=25 C) 10 nA
s Terminal capacitance vs. reverse voltage
10 nA S9219
PHOTO SENSITIVITY (A/W)
TERMINAL CAPACITANCE
1 nA
DARK CURRENT
0.2
1 nA
S9219
100 pF S9219-01 10 pF
0.1
S9219 S9219-01
SPECIFIED RANGE FOR V ()
100 pA
S9219-01
V () 0 200 400 600 800 1000
10 pA 0.01
0.1
1
10
1 pF 0.01
0.1
1
10
WAVELENGTH (nm)
KSPDB0227EC
REVERSE VOLTAGE (V)
KSPDB0162EA
REVERSE VOLTAGE (V)
KSPDB0163EB
s Dimensional outlines (unit: mm) S9219
25.0 0.1 17.5 0.1 11.3 ACTIVE AREA (100 mm2)
PHOTOSENSITIVE SURFACE
S9219-01
9.1 0.2 WINDOW 6.1 0.1
0.45 LEAD
0.4 MAX.
5.08 0.2
1.8
PHOTOSENSITIVE SURFACE
(
BNC: UG-625B/U CORE: CATHODE CASE: ANODE
10.0 0.110.5 0.2
)
1.5 MAX.
2.7
COMMON TO CASE
16.0 -0.1
+0
KSPDA0077EA
20
9.5 0.2
8.3 0.1
KSPDA0078EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2005 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
2
Cat. No. KSPD1063E04 Mar. 2005 DN

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